Ampleon BLF888E

表面安装

YES

终端数量

4

晶体管元件材料

SILICON

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

104

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.25

Maximum VSWR

40

Maximum Gate Source Leakage Current (nA)

280

Maximum IDSS (uA)

2.8

Maximum Drain Source Resistance (mOhm)

120(Typ)@6V

Typical Input Capacitance @ Vds (pF)

210@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.35@50V

Typical Output Capacitance @ Vds (pF)

67@50V

Output Power (W)

150(Typ)

Typical Power Gain (dB)

17

Maximum Frequency (MHz)

790

Minimum Frequency (MHz)

470

Typical Drain Efficiency (%)

52

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

SOT-539A

Military

无

Mounting

Screw

Package Height

4.7(Max)

Package Length

41.28(Max)

Package Width

10.29(Max)

PCB changed

5

Package Description

FLANGE MOUNT, R-CDFM-F4

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BLF888E

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

2

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.62

包装

Bulk

零件状态

活跃

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

5

参考标准

IEC-60134

JESD-30代码

R-CDFM-F4

配置

双共源

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

DS 击穿电压-最小值

104 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

超高频段

功率增益-最小值(Gp)

15.3 dB

RoHS状态

符合RoHS标准