Ampleon BLF9G38-10G

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Drain Source Resistance (mOhm)

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Typical Forward Transconductance (S)

0.91(Min)

Output Power (W)

2(Typ)

Typical Power Gain (dB)

17.7

Maximum Frequency (MHz)

3600

Minimum Frequency (MHz)

3400

Typical Drain Efficiency (%)

26

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

CDFM

Military

无

Mounting

表面贴装

Package Height

3.15(Max)

Package Length

6.93(Max)

Package Width

6.93(Max)

PCB changed

3

零件状态

Obsolete

类型

MOSFET

引脚数量

3

配置

Single

信道型

N

操作方式

2-Carrier W-CDMA

RoHS状态

符合RoHS标准