Ampleon BLP05H6350XR

ECCN (US)

EAR99

HTS

8541.29.00.75

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

135

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.33

Maximum VSWR

65

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

290(Typ)@6.08V

Typical Input Capacitance @ Vds (pF)

161@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.3@50V

Typical Output Capacitance @ Vds (pF)

53@50V

Output Power (W)

350

Typical Power Gain (dB)

27.5

Maximum Frequency (MHz)

600

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

75

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

HSOP-F

Military

无

Mounting

表面贴装

Package Height

3.6

Package Length

20.57

Package Width

9.96

PCB changed

4

包装

卷带

零件状态

活跃

引脚数量

4

配置

双共源

信道型

N

操作方式

脉冲射频

RoHS状态

符合RoHS标准