Ampleon BLP10H610

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

104

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

1.8(Typ)

Maximum Gate Source Leakage Current (nA)

120

Maximum IDSS (uA)

1.2

Maximum Drain Source Resistance (mOhm)

4.28(Typ)

Output Power (W)

20

Typical Power Gain (dB)

22

Maximum Frequency (MHz)

1400

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

58(Max)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Supplier Package

HVSON EP

Military

无

Mounting

表面贴装

Package Height

0.82

Package Length

6

Package Width

5

PCB changed

12

零件状态

活跃

引脚数量

12

配置

双共源

信道型

N

操作方式

CW

RoHS状态

符合RoHS标准