Ampleon BLP10H690P

ECCN (US)

EAR99

HTS

8541.29.00.75

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

110

Maximum Gate Source Voltage (V)

11

Maximum VSWR

40

Maximum Drain Source Resistance (mOhm)

770(Typ)@6V

Typical Input Capacitance @ Vds (pF)

42.1@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

0.22@50V

Typical Output Capacitance @ Vds (pF)

12.9@50V

Output Power (W)

90

Typical Power Gain (dB)

18

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

72

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

HSOP-F

Military

无

Mounting

表面贴装

Package Height

3.6

Package Length

20.57

Package Width

9.96

PCB changed

4

零件状态

活跃

类型

MOSFET

引脚数量

4

配置

双共源

信道型

N

操作方式

脉冲射频