Ampleon BLP7G10S-160P

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

11

Maximum VSWR

10

Maximum Drain Source Resistance (mOhm)

200(Typ)@6.05V

Typical Input Capacitance @ Vds (pF)

79@28V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.5@28V

Typical Output Capacitance @ Vds (pF)

32@28V

Typical Forward Transconductance (S)

6

Output Power (W)

160

Typical Power Gain (dB)

19.4

Maximum Frequency (MHz)

960

Minimum Frequency (MHz)

600

Typical Drain Efficiency (%)

59.7

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

HSOP-F

Military

无

Mounting

表面贴装

Package Height

3.6

Package Length

20.57

Package Width

9.96

PCB changed

4

零件状态

活跃

类型

MOSFET

引脚数量

4

配置

双共源

信道型

N

操作方式

脉冲CW