Ampleon BLP9G0722-20G

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2(Typ)

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

500(Typ)@5.75V

Typical Forward Transconductance (S)

0.3

Output Power (W)

20

Typical Power Gain (dB)

19

Maximum Frequency (MHz)

2700

Minimum Frequency (MHz)

100

Typical Drain Efficiency (%)

22

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

TO-270

Military

无

Mounting

表面贴装

Package Height

2.03

Package Length

9.65

Package Width

6.1

PCB changed

3

零件状态

活跃

类型

MOSFET

引脚数量

3

配置

Single

信道型

N

操作方式

1-Carrier W-CDMA