Atmel (Microchip Technology) 2N2905Ae3
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2N2905Ae3
225-2N2905Ae3
晶体管 - 双极性晶体管(BJT)- 单个
TO-39-3
大陆
立即发货

Bipolar Transistors - BJT BJTs
1最小包装量--
2N2905Ae3详情
Atmel (Microchip Technology) 2N2905Ae3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-39-3
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
PNP
Collector- Emitter Voltage VCEO Max
60 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
400 mV
Maximum DC Collector Current
600 mA
Pd - Power Dissipation
800 mW
Gain Bandwidth Product fT
-
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
75
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
0.035274 oz
配置
Single
集电极基极电压(VCBO)
60 V
连续集电极电流
600 mA
2N2905Ae3拓展信息
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
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