Atmel (Microchip Technology) APT4M120K

包装/外壳

TO-220-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

5 A

Rds On - Drain-Source Resistance

3.12 Ohms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

43 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

225 W

Channel Mode

Enhancement

Tradename

Power MOS 8

Fall Time

6.9 ns

Forward Transconductance - Min

4.5 S

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

24 ns

Typical Turn-On Delay Time

7.4 ns

Unit Weight

0.068784 oz

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

4.4 ns

高度

9.19 mm

长度

10.26 mm

宽度

4.72 mm