BI Technologies BCN4D120J13
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BCN4D120J13
306-BCN4D120J13
电阻器网络,阵列
DO-41-2
大陆
立即发货

Res Thick Film Array 12 Ohm 5% 0.5 (1/2)W ±200ppm/°C ISOL Molded 8-Pin 2112(4 X 1206) Convex SMD Embossed T/R
1最小包装量--
BCN4D120J13详情
BI Technologies BCN4D120J13重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
DO-41-2
Breakdown Voltage / V
105 V
Maximum Operating Temperature
+ 175 C
Vesd - Voltage ESD Contact
30 kV
Unit Weight
0.011852 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
5000
Ipp - Peak Pulse Current
2.8 A
Pppm - Peak Pulse Power Dissipation
400 W
Manufacturer
Panjit
Brand
Panjit
RoHS
Details
Vesd - Voltage ESD Air Gap
30 kV
包装
Reel
子类别
TVS Diodes / ESD Suppression Diodes
终端样式
Axial
工作电压
94 V
极性
双向
通道数量
1 Channel
箝位电压
152 V
产品类别
TVS 二极管
产品类别
ESD Suppressors / TVS Diodes
BCN4D120J13拓展信息
TT Electronics / BI Technologies
TT Electronics / BI Technologies
TT Electronics / BI Technologies
TT Electronics / BI Technologies
TT Electronics / BI Technologies
TT Electronics / BI Technologies
TT Electronics / BI Technologies
TT Electronics / BI Technologies
TT Electronics / BI Technologies
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