Central Semiconductor 2N3251PBFREE

表面安装

NO

包装/外壳

TO-18

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

2N3251PBFREE

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Package Description

CYLINDRICAL, O-MBCY-W3

Risk Rank

5.63

Number of Elements

1

Operating Temperature-Max

200 °C

Operating Temperature-Min

-65 °C

Package Body Material

METAL

Package Shape

ROUND

Package Style

CYLINDRICAL

Reflow Temperature-Max (s)

未说明

Transition Frequency-Nom (fT)

300 MHz

Turn-off Time-Max (toff)

250 ns

Turn-on Time-Max (ton)

70 ns

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

360 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

100

Collector-Emitter Saturation Voltage

500 mV

Unit Weight

0.011020 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

300 MHz

Brand

Central Semiconductor

Maximum DC Collector Current

200 mA

DC Current Gain hFE Max

300

RoHS

Details

Collector- Emitter Voltage VCEO Max

40 V

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

Transistors

端子位置

BOTTOM

终端形式

WIRE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-MBCY-W3

配置

SINGLE

晶体管应用

SWITCHING

极性/通道类型

PNP

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-18

集电极基极电压(VCBO)

50 V

最大耗散功率(Abs)

1.2 W

集电极电流-最大值(IC)

0.2 A

最小直流增益（hFE）

30

连续集电极电流

200 mA

集电极-发射器电压-最大值

40 V

VCEsat-最大值

0.5 V

集电极-基极电容-最大值

6 pF

环境耗散-最大值

0.36 W

产品类别

Bipolar Transistors - BJT