Central Semiconductor 2N3735PBFREE

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Turn-on Time-Max (ton)

48 ns

Turn-off Time-Max (toff)

60 ns

Transition Frequency-Nom (fT)

250 MHz

Reflow Temperature-Max (s)

未说明

Package Style

CYLINDRICAL

Package Shape

ROUND

Package Body Material

METAL

Operating Temperature-Min

-65 °C

Operating Temperature-Max

200 °C

Number of Elements

1

Risk Rank

5.62

Package Description

CYLINDRICAL, O-MBCY-W3

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Part Life Cycle Code

活跃

Rohs Code

有

Manufacturer Part Number

2N3735PBFREE

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

1 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

Collector-Emitter Saturation Voltage

900 mV

Unit Weight

0.035486 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Gain Bandwidth Product fT

250 MHz

Collector- Emitter Voltage VCEO Max

50 V

RoHS

Details

Maximum DC Collector Current

1.5 A

Brand

Central Semiconductor

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

Transistors

端子位置

BOTTOM

终端形式

WIRE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-MBCY-W3

配置

SINGLE

晶体管应用

SWITCHING

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-39

集电极基极电压(VCBO)

75 V

最大耗散功率(Abs)

4 W

集电极电流-最大值(IC)

1.5 A

最小直流增益（hFE）

20

集电极-发射器电压-最大值

50 V

VCEsat-最大值

0.9 V

集电极-基极电容-最大值

9 pF

环境耗散-最大值

1 W

产品类别

Bipolar Transistors - BJT