Central Semiconductor 2N5052PBFREE

表面安装

NO

包装/外壳

TO-66-2

终端数量

2

晶体管元件材料

SILICON

Manufacturer Part Number

2N5052PBFREE

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Package Description

FLANGE MOUNT, O-MBFM-P2

Risk Rank

5.69

Number of Elements

1

Operating Temperature-Max

175 °C

Operating Temperature-Min

-65 °C

Package Body Material

METAL

Package Shape

ROUND

Package Style

FLANGE MOUNT

Rise Time-Max (tr)

300 ns

Transition Frequency-Nom (fT)

10 MHz

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

40 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 175 C

DC Collector/Base Gain hfe Min

25 at 750 mA, 5 V

Collector-Emitter Saturation Voltage

5 V

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Gain Bandwidth Product fT

10 MHz

Brand

Central Semiconductor

DC Current Gain hFE Max

100 at 750 mA, 5 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

200 V

系列

2N50

包装

Tube

子类别

Transistors

技术

Si

端子位置

BOTTOM

终端形式

PIN/PEG

Reach合规守则

compliant

JESD-30代码

O-MBFM-P2

配置

SINGLE

晶体管应用

SWITCHING

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-66

集电极基极电压(VCBO)

200 V

最大耗散功率(Abs)

40 W

集电极电流-最大值(IC)

2 A

最小直流增益（hFE）

5

连续集电极电流

2 A

集电极-发射器电压-最大值

200 V

VCEsat-最大值

5 V

集电极-基极电容-最大值

250 pF

最大下降时间 (tf)

1200 ns

产品类别

Bipolar Transistors - BJT