Central Semiconductor 2N5333PBFREE

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

2N5333PBFREE

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Package Description

CYLINDRICAL, O-MBCY-W3

Risk Rank

5.73

Number of Elements

1

Operating Temperature-Max

200 °C

Operating Temperature-Min

-65 °C

Package Body Material

METAL

Package Shape

ROUND

Package Style

CYLINDRICAL

Reflow Temperature-Max (s)

未说明

Transition Frequency-Nom (fT)

30 MHz

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

1 W

Transistor Polarity

PNP

Maximum Operating Temperature

+ 200 C

Collector-Emitter Saturation Voltage

1 V

Unit Weight

0.040115 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Gain Bandwidth Product fT

30 MHz

Brand

Central Semiconductor

Maximum DC Collector Current

2 A

RoHS

Details

Collector- Emitter Voltage VCEO Max

80 V

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

Transistors

端子位置

BOTTOM

终端形式

WIRE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-MBCY-W3

配置

SINGLE

箱体转运

COLLECTOR

晶体管应用

SWITCHING

极性/通道类型

PNP

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-39

集电极基极电压(VCBO)

100 V

最大耗散功率(Abs)

1 W

集电极电流-最大值(IC)

2 A

最小直流增益（hFE）

10

集电极-发射器电压-最大值

80 V

VCEsat-最大值

1 V

环境耗散-最大值

1 W

产品类别

Bipolar Transistors - BJT