Central Semiconductor 2N5682PBFREE

表面安装

NO

包装/外壳

TO-39

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

2N5682PBFREE

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Package Description

CYLINDRICAL, O-MBCY-W3

Risk Rank

5.69

Number of Elements

1

Operating Temperature-Max

200 °C

Operating Temperature-Min

-65 °C

Package Body Material

METAL

Package Shape

ROUND

Package Style

CYLINDRICAL

Reflow Temperature-Max (s)

未说明

Transition Frequency-Nom (fT)

30 MHz

Emitter-Base Voltage

4(V)

Operating Temperature Classification

Military

Package Type

TO-39

Transistor Polarity

NPN

Collector-Base Voltage

120(V)

Category

双极电源

Operating Temp Range

-65C to 200C

Collector Current (DC)

1(A)

Rad Hardened

无

DC Current Gain

5@1A@2V/40@250MA@2V

Mounting

通孔

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

1 W

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

40

Collector-Emitter Saturation Voltage

2 V

Unit Weight

0.035486 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Gain Bandwidth Product fT

30 MHz

Brand

Central Semiconductor

Maximum DC Collector Current

1 A

DC Current Gain hFE Max

150

RoHS

Details

Collector- Emitter Voltage VCEO Max

120 V

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

Transistors

端子位置

BOTTOM

终端形式

WIRE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

频率

30(MHz)

引脚数量

3

JESD-30代码

O-MBCY-W3

配置

SINGLE

功率耗散

1(W)

输出功率

Not Required(W)

晶体管应用

SWITCHING

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-39

集电极基极电压(VCBO)

120 V

最大耗散功率(Abs)

10 W

集电极电流-最大值(IC)

1 A

最小直流增益（hFE）

5

连续集电极电流

1 A

集电极-发射器电压-最大值

120 V

VCEsat-最大值

2 V

集电极-基极电容-最大值

50 pF

环境耗散-最大值

1 W

产品类别

Bipolar Transistors - BJT