Central Semiconductor 2N5886PBFREE

表面安装

NO

包装/外壳

TO-3-2

终端数量

2

晶体管元件材料

SILICON

Manufacturer Part Number

2N5886PBFREE

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Package Description

FLANGE MOUNT, O-MBFM-P2

Risk Rank

5.68

Number of Elements

1

Operating Temperature-Max

200 °C

Operating Temperature-Min

-65 °C

Package Body Material

METAL

Package Shape

ROUND

Package Style

FLANGE MOUNT

Reflow Temperature-Max (s)

未说明

Transition Frequency-Nom (fT)

4 MHz

Turn-off Time-Max (toff)

1800 ns

Turn-on Time-Max (ton)

700 ns

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

200 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

20 at 10 A, 4 V

Collector-Emitter Saturation Voltage

4 V

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

20

Mounting Styles

通孔

Gain Bandwidth Product fT

4 MHz

Brand

Central Semiconductor

DC Current Gain hFE Max

100 at 10 A, 4 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

80 V

系列

2N58

包装

Tube

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

Transistors

技术

Si

端子位置

BOTTOM

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-MBFM-P2

配置

SINGLE

箱体转运

COLLECTOR

晶体管应用

SWITCHING

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-3

集电极基极电压(VCBO)

80 V

最大耗散功率(Abs)

200 W

集电极电流-最大值(IC)

25 A

最小直流增益（hFE）

4

连续集电极电流

25 A

集电极-发射器电压-最大值

80 V

VCEsat-最大值

4 V

集电极-基极电容-最大值

500 pF

最大下降时间 (tf)

800 ns

产品类别

Bipolar Transistors - BJT