Central Semiconductor 2N6124PBFREE

表面安装

NO

包装/外壳

TO-220-3

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

2N6124PBFREE

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Package Description

FLANGE MOUNT, R-PSFM-T3

Risk Rank

5.71

Number of Elements

1

Operating Temperature-Max

150 °C

Operating Temperature-Min

-65 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Reflow Temperature-Max (s)

未说明

Transition Frequency-Nom (fT)

2.5 MHz

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

40 W

Transistor Polarity

PNP

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

25

Collector-Emitter Saturation Voltage

1.4 V

Unit Weight

0.081130 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Gain Bandwidth Product fT

2.5 MHz

Brand

Central Semiconductor

Maximum DC Collector Current

4 A

DC Current Gain hFE Max

100

RoHS

Details

Collector- Emitter Voltage VCEO Max

45 V

系列

2N61

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

Transistors

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

R-PSFM-T3

配置

SINGLE

晶体管应用

SWITCHING

极性/通道类型

PNP

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-220AB

集电极基极电压(VCBO)

45 V

最大耗散功率(Abs)

40 W

集电极电流-最大值(IC)

4 A

最小直流增益（hFE）

10

连续集电极电流

4 A

集电极-发射器电压-最大值

45 V

VCEsat-最大值

1.4 V

产品类别

Bipolar Transistors - BJT