Comchip Technology CMSP2011A6-HF
- 收藏
- 对比
CMSP2011A6-HF
513-CMSP2011A6-HF
晶体管 - FET,MOSFET - 单个
6-WDFN Exposed Pad
大陆
立即发货

MOSFET P-CH 20VDS 12VGS 11A DFNW
1最小包装量--
CMSP2011A6-HF详情
Comchip Technology CMSP2011A6-HF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-WDFN Exposed Pad
供应商器件包装
DFNWB2x2-6L-J
厂商
芯片技术
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Power Dissipation (Max)
750mW (Ta)
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
11 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
750 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
芯片技术
Brand
芯片技术
Qg - Gate Charge
35 nC
Rds On - Drain-Source Resistance
24 mOhms
RoHS
Details
Typical Turn-Off Delay Time
30 ns
Id - Continuous Drain Current
11 A
系列
-
操作温度
150°C (TJ)
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
24mOhm @ 7.2A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1V @ 250μA
输入电容(Ciss)(Max)@Vds
1580 pF @ 6 V
门极电荷(Qg)(最大)@Vgs
35 nC @ 4.5 V
上升时间
35 ns
漏源电压 (Vdss)
20 V
Vgs(最大值)
±12V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
CMSP2011A6-HF拓展信息
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology
Comchip Technology







哦! 它是空的。