CTS TC32V3A32K7680

包装/外壳

TO-3PN-3

Vds - Drain-Source Breakdown Voltage

250 V

Typical Turn-On Delay Time

75 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

298 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.162260 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

450

Mounting Styles

通孔

Forward Transconductance - Min

55 S

Channel Mode

Enhancement

Part # Aliases

FQA62N25C_NL

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

130 nC

Tradename

QFET

Rds On - Drain-Source Resistance

35 mOhms

RoHS

Details

Typical Turn-Off Delay Time

245 ns

Id - Continuous Drain Current

62 A

Supply Voltage-Max

1.5 V

Supply Voltage-Min

1.5 V

系列

FQA62N25C

包装

Tube

类型

QFET

子类别

MOSFETs

技术

Si

频率

32.768 kHz

频率稳定性

50 PPM

终端样式

SMD/SMT

配置

Single

通道数量

1 Channel

负载电容

15 pF

上升时间

395 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

输出格式

CMOS

产品类别

MOSFET

宽度

5 mm

高度

20.1 mm

长度

16.2 mm