Dale CP00053R000JE143

包装/外壳

TO-3PN

供应商器件包装

Axial

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Pd - Power Dissipation

319 W

Maximum Operating Temperature

+ 175 C

Collector-Emitter Saturation Voltage

2.14 V

Unit Weight

0.225789 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

450

Continuous Collector Current at 25 C

100 A

Mounting Styles

通孔

Manufacturer

onsemi

Brand

onsemi / Fairchild

Continuous Collector Current Ic Max

100 A

RoHS

Details

Collector- Emitter Voltage VCEO Max

650 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

系列

FGA50T65SHD

包装

Tube

操作温度

-65°C ~ 275°C

尺寸/尺寸

0.875 L x 0.375 W (22.22mm x 9.52mm)

容差

±5%

湿度敏感性等级(MSL)

1 (Unlimited)

终止次数

2

温度系数

±300ppm/°C

电阻

3 Ohms

组成

Wirewound

功率(瓦特)

5W

子类别

IGBTs

技术

Si

失败率

-

产品类别

IGBT晶体管

特征

Flame Proof, Safety

产品类别

IGBT晶体管

座位高度(最大)

-