Dale RN55E6190FB14

包装/外壳

TO-220-3

供应商器件包装

Axial

Vds - Drain-Source Breakdown Voltage

150 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

400 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

IXYS

Brand

IXYS

Qg - Gate Charge

87 nC

Tradename

HiPerFET

Rds On - Drain-Source Resistance

8.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

100 ns

Id - Continuous Drain Current

130 A

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other Names

RN55E6190FB14-MIL

包装

Tube

操作温度

-65°C ~ 175°C

系列

Military, MIL-R-10509/7, RN55

尺寸/尺寸

0.090 Dia x 0.240 L (2.29mm x 6.10mm)

容差

±1%

湿度敏感性等级(MSL)

1 (Unlimited)

终止次数

2

温度系数

±25ppm/°C

电阻

619 Ohms

组成

Metal Film

功率(瓦特)

0.125W, 1/8W

子类别

MOSFETs

技术

Si

失败率

-

配置

Single

通道数量

1 Channel

上升时间

27 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

特征

Flame Retardant Coating, Military, Moisture Resistant, Safety

产品类别

MOSFET

座位高度(最大)

-