Dale RNC55J9530BPRE6

包装/外壳

TO-3PN-3

供应商器件包装

Axial

Id - Continuous Drain Current

16.5 A

Typical Turn-Off Delay Time

65 ns

Rds On - Drain-Source Resistance

380 mOhms

Tradename

UniFET

Qg - Gate Charge

45 nC

Brand

onsemi / Fairchild

Manufacturer

onsemi

Part # Aliases

FDA16N50_F109

Channel Mode

Enhancement

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

30

Minimum Operating Temperature

- 55 C

Unit Weight

0.162260 oz

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

205 W

Vgs th - Gate-Source Threshold Voltage

3 V

Typical Turn-On Delay Time

40 ns

Vds - Drain-Source Breakdown Voltage

500 V

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other Names

RNC55J9530BPRE6-MIL

包装

Tube

系列

FDA16N50_F109

操作温度

-65°C ~ 175°C

尺寸/尺寸

0.094 Dia x 0.250 L (2.39mm x 6.35mm)

容差

±0.1%

湿度敏感性等级(MSL)

1 (Unlimited)

终止次数

2

温度系数

±25ppm/°C

电阻

953 Ohms

组成

Metal Film

功率(瓦特)

0.125W, 1/8W

子类别

MOSFETs

技术

Si

失败率

P (0.1%)

配置

Single

通道数量

1 Channel

上升时间

150 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

特征

Military, Moisture Resistant, Weldable

产品类别

MOSFET

长度

16.2 mm

高度

20.1 mm

宽度

5 mm

座位高度(最大)

-