Diodes DMP2018LFK-13

包装/外壳

U-DFN2523-6

Factory Pack QuantityFactory Pack Quantity

10000

Manufacturer

Diodes Incorporated

Brand

Diodes Incorporated

Vds - Drain-Source Breakdown Voltage

20 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

2.1 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

113 nC

Rds On - Drain-Source Resistance

25 mOhms

Id - Continuous Drain Current

9.2 A

子类别

MOSFETs

技术

Si

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET