E-Switch 320TANGRYCD3

包装/外壳

TO-251-3

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

48 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5040

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

FQU5N50CTU_WS

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

24 nC

Rds On - Drain-Source Resistance

1.4 Ohms

RoHS

Details

Id - Continuous Drain Current

4 A

系列

FQU5N50C

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

2.5 mm

高度

6.3 mm

长度

6.8 mm