Fairchild FCH190N65F-F155

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247-3

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 2mA

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

20.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Fairchild Semiconductor

Power Dissipation (Max)

208W (Tc)

操作温度

-55°C ~ 150°C (TJ)

系列

FRFET®, SuperFET® II

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

190mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

3225 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

78 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

场效应管特性

-