FDA15N65详情
Fairchild FDA15N65重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-3P-3, SC-65-3
供应商器件包装
TO-3PN
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5V @ 250µA
Package
Tube
Current - Continuous Drain (Id) @ 25℃
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
Fairchild Semiconductor
Power Dissipation (Max)
260W (Tc)
Product Status
Obsolete
操作温度
-55°C ~ 150°C (TJ)
系列
UniFET™
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
440mOhm @ 8A, 10V
输入电容(Ciss)(Max)@Vds
3095 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
63 nC @ 10 V
漏源电压 (Vdss)
650 V
Vgs(最大值)
±30V
场效应管特性
-
FDA15N65拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor








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