FDR844P详情
Fairchild FDR844P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-TSOP (0.130, 3.30mm Width)
供应商器件包装
SuperSOT™-8
Package
Bulk
Current - Continuous Drain (Id) @ 25℃
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
厂商
Fairchild Semiconductor
Power Dissipation (Max)
1.8W (Ta)
Product Status
Obsolete
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1.5V @ 250µA
操作温度
-55°C ~ 150°C (TJ)
系列
-
技术
MOSFET (Metal Oxide)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
11mOhm @ 10A, 4.5V
输入电容(Ciss)(Max)@Vds
4951 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
74 nC @ 4.5 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±8V
场效应管特性
-
FDR844P拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor








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