Fairchild FQI4N20

包装/外壳

TO-262-3 Long Leads, I²Pak, TO-262AA

安装类型

通孔

供应商器件包装

I2PAK (TO-262)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 250µA

Product Status

活跃

Power Dissipation (Max)

3.13W (Ta), 45W (Tc)

厂商

Fairchild Semiconductor

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

3.6A (Tc)

Package

Bulk

系列

QFET™

操作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.4Ohm @ 1.8A, 10V

输入电容(Ciss)(Max)@Vds

220 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

6.5 nC @ 10 V

漏源电压 (Vdss)

200 V

Vgs（最大值）

±30V

场效应管特性

-