FQU3P20TU详情
Fairchild FQU3P20TU重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-251-3 Short Leads, IPak, TO-251AA
安装类型
通孔
供应商器件包装
I-PAK
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5V @ 250µA
Product Status
Obsolete
Power Dissipation (Max)
2.5W (Ta), 37W (Tc)
厂商
Fairchild Semiconductor
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
2.4A (Tc)
Package
Tube
系列
QFET®
操作温度
-55°C ~ 150°C (TJ)
技术
MOSFET (Metal Oxide)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
2.7Ohm @ 1.2A, 10V
输入电容(Ciss)(Max)@Vds
250 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
8 nC @ 10 V
漏源电压 (Vdss)
200 V
Vgs(最大值)
±30V
场效应管特性
-
FQU3P20TU拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor








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