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价格梯度
内地含税价
1
¥39.962654
10
¥37.700614
100
¥35.566621
500
¥33.553417
1000
¥31.654167
HUFA75852G3_F085详情
Fairchild HUFA75852G3_F085重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
表面安装
NO
供应商器件包装
TO-247-3
Package
Bulk
Base Product Number
HUFA75
Current - Continuous Drain (Id) @ 25℃
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
Fairchild Semiconductor
Power Dissipation (Max)
500W (Tc)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250µA
Package Description
,
Manufacturer Package Code
TO247A03
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
175 °C
Rohs Code
有
Manufacturer Part Number
HUFA75852G3_F085
Manufacturer
安森美半导体
Part Life Cycle Code
终身购买
Ihs Manufacturer
ON SEMICONDUCTOR
Risk Rank
5.19
操作温度
-55°C ~ 175°C (TJ)
系列
Automotive, AEC-Q101, UltraFET™
ECCN 代码
EAR99
HTS代码
8541.29.00.95
子类别
FET 通用电源
技术
MOSFET (Metal Oxide)
峰值回流焊温度(摄氏度)
未说明
Brand Name
安森美半导体
配置
Single
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
16mOhm @ 75A, 10V
输入电容(Ciss)(Max)@Vds
7690 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
480 nC @ 20 V
漏源电压 (Vdss)
150 V
Vgs(最大值)
±20V
极性/通道类型
N-CHANNEL
最大漏极电流 (Abs) (ID)
75 A
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
500 W
场效应管特性
-
达到SVHC
compliant
HUFA75852G3_F085拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







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