Fairchild Semiconductor FDD6776A
- 收藏
- 对比
FDD6776A
836-FDD6776A
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

Power Field-Effect Transistor, 17.7A I(D), 25V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
1最小包装量--
FDD6776A详情
Fairchild Semiconductor FDD6776A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
TO-252, (D-Pak)
Package
Bulk
Current - Continuous Drain (Id) @ 25℃
17.7A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
Fairchild Semiconductor
Power Dissipation (Max)
3.7W (Ta), 39W (Tc)
Product Status
Obsolete
操作温度
-55°C ~ 175°C (TJ)
系列
PowerTrench®
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
7.5mOhm @ 17.7A, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 250µA
输入电容(Ciss)(Max)@Vds
1490 pF @ 13 V
门极电荷(Qg)(最大)@Vgs
29 nC @ 10 V
漏源电压 (Vdss)
25 V
Vgs(最大值)
±20V
场效应管特性
-
FDD6776A拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







哦! 它是空的。