Fairchild Semiconductor FDFC3N108
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FDFC3N108
836-FDFC3N108
晶体管 - FET,MOSFET - 单个
SOT-23-6 Thin, TSOT-23-6
大陆
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Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
1最小包装量--
FDFC3N108详情
Fairchild Semiconductor FDFC3N108重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-23-6 Thin, TSOT-23-6
供应商器件包装
SuperSOT™-6
Package
Bulk
Current - Continuous Drain (Id) @ 25℃
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
厂商
Fairchild Semiconductor
Power Dissipation (Max)
-
Product Status
Obsolete
操作温度
-55°C ~ 150°C (TJ)
系列
-
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
70mOhm @ 3A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.5V @ 250µA
输入电容(Ciss)(Max)@Vds
355 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
4.9 nC @ 4.5 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±12V
场效应管特性
Schottky Diode (Isolated)
FDFC3N108拓展信息
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Fairchild Semiconductor
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