Fairchild Semiconductor FDH40N50F
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FDH40N50F
836-FDH40N50F
晶体管 - FET,MOSFET - 单个
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大陆
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Power Field-Effect Transistor, 42A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
1最小包装量--
FDH40N50F详情
Fairchild Semiconductor FDH40N50F重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Compliant
Turn Off Delay Time
32 ns
最高工作温度
150 °C
最小工作温度
-55 °C
元素配置
Single
功率耗散
625 W
上升时间
123 ns
连续放电电流(ID)
42 A
栅极至源极电压(Vgs)
30 V
漏源击穿电压
500 V
漏源电阻
130 mΩ
FDH40N50F拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







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