Fairchild Semiconductor FDI040N06

安装类型

通孔

包装/外壳

TO-262-3 Long Leads, I²Pak, TO-262AA

供应商器件包装

I2PAK (TO-262)

Package

Tube

Current - Continuous Drain (Id) @ 25℃

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Fairchild Semiconductor

Power Dissipation (Max)

231W (Tc)

Product Status

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 250µA

操作温度

-55°C ~ 175°C (TJ)

系列

PowerTrench®

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4mOhm @ 75A, 10V

输入电容(Ciss)(Max)@Vds

8235 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

133 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

场效应管特性

-