Fairchild Semiconductor FDU6696
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FDU6696
836-FDU6696
晶体管 - FET,MOSFET - 单个
TO-251-3 Short Leads, IPak, TO-251AA
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
FDU6696详情
Fairchild Semiconductor FDU6696重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-251-3 Short Leads, IPak, TO-251AA
安装类型
通孔
供应商器件包装
I-PAK
厂商
Fairchild Semiconductor
Product Status
活跃
Package
Bulk
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3V @ 250μA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25℃
13A (Ta), 50A (Tc)
Power Dissipation (Max)
1.6W (Ta), 52W (Tc)
操作温度
-55°C ~ 175°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
8mOhm @ 13A, 10V
输入电容(Ciss)(Max)@Vds
1715 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
24 nC @ 5 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±16V
场效应管特性
-
FDU6696拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







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