Fairchild Semiconductor FQD17P06
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FQD17P06
836-FQD17P06
晶体管 - FET,MOSFET - 单个
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Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
1最小包装量--
FQD17P06详情
Fairchild Semiconductor FQD17P06重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Compliant
漏源电压 (Vdss)
60 V
连续放电电流(ID)
12 A
漏源击穿电压
60 V
达到SVHC
无SVHC
FQD17P06拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







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