Fairchild Semiconductor HUF75309D3
- 收藏
- 对比
HUF75309D3
836-HUF75309D3
晶体管 - FET,MOSFET - 单个
--
大陆
立即发货

Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
1最小包装量--
HUF75309D3详情
Fairchild Semiconductor HUF75309D3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Non-Compliant
Turn Off Delay Time
24 ns
最高工作温度
175 °C
最小工作温度
-55 °C
元素配置
Single
功率耗散
55 W
上升时间
39 ns
连续放电电流(ID)
19 A
栅极至源极电压(Vgs)
20 V
漏源击穿电压
55 V
漏源电阻
70 mΩ
HUF75309D3拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







哦! 它是空的。