Fairchild Semiconductor HUF75339S3ST
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HUF75339S3ST
836-HUF75339S3ST
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
HUF75339S3ST详情
Fairchild Semiconductor HUF75339S3ST重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
D2PAK (TO-263)
厂商
Fairchild Semiconductor
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Power Dissipation (Max)
200W (Tc)
操作温度
-55°C ~ 175°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
12mOhm @ 75A, 10V
输入电容(Ciss)(Max)@Vds
2000 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
130 nC @ 20 V
漏源电压 (Vdss)
55 V
Vgs(最大值)
±20V
场效应管特性
-
HUF75339S3ST拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
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