Fairchild Semiconductor HUF76633S3ST

包装/外壳

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

安装类型

表面贴装

供应商器件包装

D2PAK (TO-263)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3V @ 250µA

Product Status

Obsolete

Power Dissipation (Max)

145W (Tc)

厂商

Fairchild Semiconductor

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

39A (Tc)

Package

Bulk

系列

UltraFET™

操作温度

-55°C ~ 175°C (TJ)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

35mOhm @ 39A, 10V

输入电容(Ciss)(Max)@Vds

1820 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

67 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±16V

场效应管特性

-