Fairchild Semiconductor IRFR224BTM_FP001
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IRFR224BTM_FP001
836-IRFR224BTM_FP001
晶体管 - FET,MOSFET - 单个
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Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3
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IRFR224BTM_FP001详情
Fairchild Semiconductor IRFR224BTM_FP001重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Compliant
Turn Off Delay Time
40 ns
最高工作温度
150 °C
最小工作温度
-55 °C
元素配置
Single
功率耗散
2.5 W
上升时间
35 ns
连续放电电流(ID)
3.8 A
栅极至源极电压(Vgs)
30 V
漏源击穿电压
250 V
漏源电阻
1.1 Ω
IRFR224BTM_FP001拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







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