Fairchild Semiconductor IRFS630B_FP001
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IRFS630B_FP001
836-IRFS630B_FP001
晶体管 - FET,MOSFET - 单个
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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IRFS630B_FP001详情
Fairchild Semiconductor IRFS630B_FP001重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Compliant
Turn Off Delay Time
60 ns
最高工作温度
150 °C
最小工作温度
-55 °C
元素配置
Single
功率耗散
38 W
上升时间
70 ns
连续放电电流(ID)
9 A
栅极至源极电压(Vgs)
30 V
漏源击穿电压
200 V
漏源电阻
400 mΩ
IRFS630B_FP001拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







哦! 它是空的。