Fairchild Semiconductor RF1S530SM9A
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RF1S530SM9A
836-RF1S530SM9A
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
RF1S530SM9A详情
Fairchild Semiconductor RF1S530SM9A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
TO-263AB
厂商
Fairchild Semiconductor
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
79W (Tc)
系列
-
操作温度
-55°C ~ 175°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
160mOhm @ 8.3A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
600 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
30 nC @ 10 V
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
场效应管特性
-
RF1S530SM9A拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
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Fairchild Semiconductor
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Fairchild Semiconductor
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