Fairchild Semiconductor SI6466DQ
- 收藏
- 对比
SI6466DQ
836-SI6466DQ
晶体管 - FET,MOSFET - 单个
8-TSSOP (0.173", 4.40mm Width)
大陆
立即发货

N-CHANNEL POWER MOSFET
--最小包装量--
SI6466DQ详情
Fairchild Semiconductor SI6466DQ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
8-TSSOP (0.173", 4.40mm Width)
安装类型
表面贴装
供应商器件包装
8-TSSOP
Product Status
活跃
Package
Bulk
Power Dissipation (Max)
1.1W (Ta)
厂商
Fairchild Semiconductor
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1.5V @ 250μA
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Current - Continuous Drain (Id) @ 25℃
7.8A (Ta)
操作温度
-55°C ~ 150°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
15mOhm @ 7.8A, 4.5V
输入电容(Ciss)(Max)@Vds
1320 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
20 nC @ 4.5 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±12V
场效应管特性
-
SI6466DQ拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







哦! 它是空的。