Fairchild Semiconductor Corporation IRFD120
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IRFD120
836-IRFD120
晶体管 - 特殊用途
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Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HEXDIP-4
1最小包装量--
IRFD120详情
Fairchild Semiconductor Corporation IRFD120重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
4
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
DIP
Package Description
HEXDIP-4
Drain Current-Max (ID)
1.3 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Type of capacitor
ceramic
Kind of capacitor
MLCC
Mounting
SMD
Case - inch
0603
Case - mm
1608
Capacitors series
KGM
Gross weight
0.029 g
Operating temperature
-55...125°C
容差
±2%
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
锡铅
电容量
1nF
端子位置
DUAL
终端形式
THROUGH-HOLE
Reach合规守则
unknown
引脚数量
4
JESD-30代码
R-PDIP-T4
资历状况
不合格
电介质
C0G (NP0)
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.3 Ω
DS 击穿电压-最小值
100 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
1 W
Operating voltage
50V
IRFD120拓展信息
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation








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