Freescale Semiconductor, Inc. (NXP Semiconductors) BLP25M710Z

EU RoHS

Compliant

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.3

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (MOhm)

1000(Typ)@6.05V

Output Power (W)

10

Typical Power Gain (dB)

16

Maximum Frequency (MHz)

2500

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

23

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.82

Package Width

4

Package Length

6

PCB changed

12

Supplier Package

HVSON EP

包装

卷带

零件状态

NRND

引脚数量

12

配置

双共源

信道型

N

操作方式

Pulsed RF|DVB-T