Freescale Semiconductor, Inc. (NXP Semiconductors) BLP8G20S-80PY

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.75

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.25

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

120

Maximum IDSS (uA)

1.2

Maximum Drain Source Resistance (MOhm)

320(Typ)@3.75V

Typical Forward Transconductance (S)

0.41

Output Power (W)

14.2(Typ)

Typical Power Gain (dB)

17.5

Maximum Frequency (MHz)

2200

Minimum Frequency (MHz)

1800

Typical Drain Efficiency (%)

33

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Mounting

表面贴装

Package Height

3.6

Package Width

9.96

Package Length

20.57

PCB changed

4

Supplier Package

HSOP-F

包装

卷带

零件状态

Obsolete

引脚数量

4

配置

双共源

信道型

N

操作方式

2-Carrier W-CDMA