Freescale Semiconductor, Inc. (NXP Semiconductors) PMV45EN2R

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

Automotive

无

PPAP

无

Category

小信号

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

20

Maximum Gate Threshold Voltage (V)

2

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

4.1

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

42@10V

Typical Gate Charge @ Vgs (nC)

3.6@10V

Typical Gate Charge @ 10V (nC)

3.6

Typical Gate to Drain Charge (nC)

0.4

Typical Gate to Source Charge (nC)

0.5

Typical Input Capacitance @ Vds (pF)

209@15V

Typical Reverse Transfer Capacitance @ Vds (pF)

17@15V

Minimum Gate Threshold Voltage (V)

1

Typical Output Capacitance (pF)

50

Maximum Power Dissipation (mW)

1115

Typical Fall Time (ns)

2

Typical Rise Time (ns)

12

Typical Turn-Off Delay Time (ns)

11

Typical Turn-On Delay Time (ns)

3

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation on PCB @ TC=25°C (W)

1.115

Maximum Pulsed Drain Current @ TC=25°C (A)

16

Typical Diode Forward Voltage (V)

0.8

Typical Gate Plateau Voltage (V)

2.6

Maximum Diode Forward Voltage (V)

1.2

Typical Gate Threshold Voltage (V)

1.5

Maximum Positive Gate Source Voltage (V)

20

Maximum Continuous Drain Current on PCB @ TC=25°C (A)

4.1

Mounting

表面贴装

Package Height

1(Max)

Package Width

1.4(Max)

Package Length

3(Max)

PCB changed

3

Standard Package Name

SOT

Supplier Package

SOT-23

Lead Shape

Gull-wing

包装

卷带

零件状态

活跃

引脚数量

3

配置

Single

信道型

N