2MI50F-050详情
Fuji 2MI50F-050重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
8
晶体管元件材料
SILICON
Manufacturer Part Number
2MI50F-050
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FUJI ELECTRIC CO LTD
Package Description
FLANGE MOUNT, R-PUFM-X8
Risk Rank
5.82
Drain Current-Max (ID)
50 A
Number of Elements
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
端子位置
UPPER
终端形式
UNSPECIFIED
Reach合规守则
unknown
JESD-30代码
R-PUFM-X8
资历状况
不合格
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
最大漏极电流 (Abs) (ID)
50 A
漏极-源极导通最大电阻
0.11 Ω
脉冲漏极电流-最大值(IDM)
150 A
DS 击穿电压-最小值
500 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
400 W
2MI50F-050拓展信息
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD








哦! 它是空的。