FUJITSU Limited FLM1314-8F
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FLM1314-8F
922-FLM1314-8F
晶体管 - 特殊用途
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大陆
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Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 4 PIN
1最小包装量--
FLM1314-8F详情
FUJITSU Limited FLM1314-8F重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
2
晶体管元件材料
砷化镓
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FUJITSU LTD
Package Description
FLANGE MOUNT, R-CDFM-F2
Drain Current-Max (ID)
3 A
Number of Elements
1
Operating Temperature-Max
175 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
ECCN 代码
EAR99
HTS代码
8541.29.00.95
端子位置
DUAL
终端形式
FLAT
Reach合规守则
compliant
JESD-30代码
R-CDFM-F2
资历状况
不合格
配置
SINGLE
操作模式
DEPLETION MODE
箱体转运
SOURCE
晶体管应用
AMPLIFIER
极性/通道类型
N-CHANNEL
DS 击穿电压-最小值
15 V
场效应管技术
JUNCTION
最高频段
Ku波段
环境耗散-最大值
45.5 W
FLM1314-8F拓展信息
FUJITSU Semiconductor Limited
FUJITSU Semiconductor Limited
FUJITSU Semiconductor Limited
FUJITSU Limited
FUJITSU Limited
FUJITSU Semiconductor Limited
FUJITSU Semiconductor Limited
FUJITSU Semiconductor Limited
FUJITSU Semiconductor Limited
FUJITSU Semiconductor Limited







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