GigaDevice GD25LQ16SIGR
- 收藏
- 对比
GD25LQ16SIGR
970-GD25LQ16SIGR
存储器
--
大陆
立即发货

16Mb SPI NOR Flash 1.65V-2.0V SOP8 (208mm)
1最小包装量--
GD25LQ16SIGR详情
GigaDevice GD25LQ16SIGR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
8
Stranding element
无
Permitted cable outer temperature after assembling without vibration
-40 - 90
Material core insulation
Polyvinyl chloride (PVC)
Colour outer sheath
Black
Outer diameter approx.
11.5
Screen over stranding element
None
Core identification
Numbers
Nominal cross section conductor
2.08
Screen over stranding
None
Low smoke (according to EN 61034-2)
无
Min. permitted bending radius, moving application/free movement
58
Nominal voltage U
1000
Material outer sheath
Polyvinyl chloride (PVC)
Conductor category
Class D = flexible
Package Description
SOP,
Package Style
小概要
Number of Words Code
16000000
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-40 °C
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
85 °C
Rohs Code
有
Manufacturer Part Number
GD25LQ16SIGR
Clock Frequency-Max (fCLK)
120 MHz
Number of Words
16777216 words
Supply Voltage-Nom (Vsup)
1.8 V
Package Code
SOP
Package Shape
RECTANGULAR
Manufacturer
GigaDevice Semiconductor (Beijing) Inc
Part Life Cycle Code
接触制造商
Ihs Manufacturer
GIGADEVICE SEMICONDUCTOR INC
Risk Rank
5.75
类型
NOR型号
HTS代码
8542.32.00.51
技术
CMOS
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
1.27 mm
Reach合规守则
unknown
JESD-30代码
R-PDSO-G8
温度等级
INDUSTRIAL
操作模式
SYNCHRONOUS
组织结构
16MX1
座位高度-最大
2.16 mm
内存宽度
1
记忆密度
16777216 bit
并行/串行
SERIAL
内存IC类型
FLASH
编程电压
1.8 V
电压 - 供电 (最大值)
2 V
电压 - 供电 (最小值)
1.65 V
宽度
5.23 mm
长度
5.28 mm
GD25LQ16SIGR拓展信息
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited
GigaDevice Semiconductor (HK) Limited







哦! 它是空的。